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CYStech Electronics Corp.
High Voltage PNP Epitaxial Planar Transistor
Spec. No. : C321N3R Issued Date : 2003.04.12 Revised Date : Page No. : 1/4
BTA1722N3
Features
* High Breakdown Voltage:BVCEO-350V * Complementary to BTC4062N3
Symbol
BTA1722N3 SOT-23
BBase CCollector EEmitter
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current---continuous Power Dissipation @TA=25 Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -350 -350 -5 -500 225 150 -55~+150 Unit V V V mA mW C C
BTA1722N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) 1 VCE(sat) 2 *VCE(sat) 3 *VCE(sat) 4 VBE(sat) 1 VBE(sat) 2 *VBE(sat) 3 VBE(on) hFE 1 hFE 2 *hFE 3 *hFE 4 *hFE 5 fT Cob Min. -350 -350 -5 20 30 30 20 15 40 Typ. Max. -50 -50 -0.3 -0.35 -0.5 -1.0 -0.75 -0.85 -0.9 -2 200 200 200 6 Unit V V V nA nA V V V V V V V V MHz pF
Spec. No. : C321N3R Issued Date : 2003.04.12 Revised Date : Page No. : 2/4
Test Conditions IC=-100A IC=-1mA IE=-10A VCB=-250V VEB=-4V IC=-10mA, IB=-1mA IC=-20mA, IB=-2mA IC=-30mA, IB=-3mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-20mA, IB=-2mA IC=-30mA, IB=-3mA VCE=-10V, IC=-100mA VCE=-10V, IC=-1mA VCE=-10V,IC=-10mA VCE=-10V,IC=-30mA VCE=-10V,IC=-50mA VCE=-10V,IC=-100mA VCE=-20V, IC=-10mA, f=20MHz VCB=-20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
BTA1722N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current 1000 125 75 Saturation Voltage---(mV) 75 1000 125 100 25 10 0.1 1 10 100 1000 0.1 1 10000
Spec. No. : C321N3R Issued Date : 2003.04.12 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
100 25 Curr HFE@VCE=10V 10 Collector Current---IC(mA)
VCE(SAT)@IC=10IB 10 100 1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current 1000
Power Dissipation---PD(mW) 250
Power Derating Curve
25 Saturation Voltage---(mV)
200 150 100 50 0
75 125 VCE(SAT)@IC=10IB 100 0.1 1 10 100 1000 Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature --- Ta( )
BTA1722N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C321N3R Issued Date : 2003.04.12 Revised Date : Page No. : 4/4
A L 3 B 1 2 S
Marking:
TE 2Z
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Base 2.Emitter 3.Collector
C D K
H
J *: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1722N3
CYStek Product Specification

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